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| inchange semiconductor isc product specification isc silicon npn power transistor KSC5338 description collector-emitter breakdown voltage- : v (br) ceo = 450v(min) high switching speed wide area of safe operation applications designed for switching regulator and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1000 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 9 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b b base current-continuous 2 a i bm base current-peak 4 a p c collector power dissipation @ t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor KSC5338 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 1000 v v (br)ceo collector-emitter breakdown voltage i c = 5ma; i b = 0 b 450 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 9 v v ce (sat)-1 collector-emitter saturation voltage i c = 1a; i b = 0.1a b 0.8 v v ce (sat)-2 collector-emitter saturation voltage i c = 2a; i b = 0.4a b 0.5 v v be (sat)-1 base-emitter saturation voltage i c = 1a; i b = 0.1a b 1.1 v v be (sat)-2 base-emitter saturation voltage i c = 2a; i b = 0.4a b 1.25 v i cbo collector cutoff current v cb = 800v; v be = 0 10 a i ebo emitter cutoff current v eb = 9v; i c =0 10 a h fe-1 dc current gain i c = 0.5a; v ce = 5v 15 30 h fe-2 dc current gain i c = 2a; v ce = 1v 6 c ob output capacitance i e = 0; v cb = 10v; f test = 0.1mhz 70 pf f t current-gain?bandwidth product i c = 0.1a ;v ce = 6v 14 mhz switching times t on turn-on time 0.2 s t s storage time 2.0 s t f fall time i c = 1a; i b1 = -i b2 =0.2a; v cc = 125v 0.5 s isc website www.iscsemi.cn 2 |
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